| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8205ec6ee1cd95eb60a03826535bad97 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0035
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0276
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-2004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08F20-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08F20-28 |
| filingDate |
2021-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_67787db023e7ebef6a9f218cc2e76d4d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee3e8b084f7299eaac66117d7aa82dce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_31f4f2ba679d44df6020e0a7fab628c0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_878ada85d343014ab0699c2d17a36bfe |
| publicationDate |
2021-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2021153698-A1 |
| titleOfInvention |
Composition for forming euv resist underlayer film |
| abstract |
Provided are a composition for forming a resist underlayer film that enables the formation of a desired resist pattern, a method for manufacturing a resist pattern using the composition for forming a resist underlayer film and a method for manufacturing a semiconductor device. This composition for forming an EUV resist underlayer film comprises a polymer that contains a structure represented by formula (1) at an end [in formula (1): X1 represents -O-, -S-, an ester bond or an amide bond; R1 represents an optionally halogenated alkyl group having 1-20 carbon atoms; and * represents a binding portion to the polymer end] and an organic solvent. |
| priorityDate |
2020-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |