| abstract |
[Problem] The purpose of the present invention is to provide: a liquid composition for cleaning, which removes an organosiloxane thin film, a dry etching residue and a photoresist on the surface of an object to be processed in the production procedure of a semiconductor element, while suppressing damage to a low dielectric constant interlayer insulating film, a wiring material such as copper or a copper alloy, a barrier metal and a barrier insulating film; a method for cleaning a semiconductor element, which uses the liquid composition for cleaning; and a method for manufacturing a semiconductor element, which uses the liquid composition for cleaning.n[Solution] A liquid composition for cleaning according to the present invention, which is used for the production of a semiconductor element, contains: 0.05-25% by mass of quaternary ammonium hydroxide; 0.001-1.0% by mass of potassium hydroxide; 5-85% by mass of a water-soluble organic solvent; and 0.0005-10% by mass of a pyrazole. |