abstract |
In this semiconductor device manufacturing method, a thin film having a predetermined composition including a predetermined element is formed on a substrate by alternately performing a predetermined number of times: a step of forming on the substrate a first layer, which contains the predetermined element, nitrogen and carbon, by alternately performing a predetermined number of times a step of supplying to the substrate a first raw material gas containing the predetermined element and a halogen group, and a step of supplying to the substrate a second raw material gas containing the predetermined element and an amino group; and a step of forming a second layer by modifying the first layer by supplying to the substrate a reaction gas different from the raw material gases. |