| abstract |
The present invention provides a semiconductor device which has good conductivity. A semiconductor device (10) according to the present invention is provided with a base material (2), a semiconductor element (3), and an adhesive layer (1) which is positioned between and adheres to the base material (2) and the semiconductor element (3). In this semiconductor device (10), metal particles and insulating particles are dispersed in the adhesive layer (1), and the metal particles are scale-shaped or oval-shaped. When the volume content of the metal particles in the adhesive layer (1) is taken as a and the volume content of the insulating particles in the adhesive layer (1) is taken as b, the volume content (a+b) of a filler in the adhesive layer (1) is set to between 0.20 and 0.50, and the volume content a/(a+b) of the metal particles in the filler is set to between 0.03 and 0.70. |