| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_47d2073929b3a0cd6dcb9195b02b771d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c973d2b11024a6ee323a3a0527197c41
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3b48009250db80cbe8eb30065968dd87
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eecde1a404f2621d62b1968f6a32a38b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-308
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2011-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c72127c9991d2aeb7c0296425273558d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6058993f5c43ec3a1edd60aa12c9ca2d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8dfb6f6eff374acd681eb0cbef75db06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bae601768f5c975b4847a2831052431 |
| publicationDate |
2012-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2012094149-A2 |
| titleOfInvention |
Radical steam cvd |
| abstract |
Methods of forming silicon oxide layers are described. The methods include concurrently combining plasma-excited (radical) steam with an unexcited silicon precursor. Nitrogen may be supplied through the plasma-excited route (e.g. by adding ammonia to the steam) and/or by choosing a nitrogen-containing unexcited silicon precursor. The methods result in depositing a silicon-oxygen-and-nitrogen-containing layer on a substrate. The oxygen content of the silicon-oxygen-and-nitrogen-containing layer is then increased to form a silicon oxide layer which may contain little or no nitrogen. The increase in oxygen content may be brought about by annealing the layer in the presence of an oxygen-containing atmosphere and the density of the film may be increased further by raising the temperature even higher in an inert environment. |
| priorityDate |
2011-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |