| abstract |
Disclosed is a method for manufacturing a semiconductor device, wherein an interlayer insulating film (PIL) is formed on a semiconductor substrate (1S), and after performing CMP for forming a plug (PL1) in the interlayer insulating film (PIL), the upper surface of the plug (PL1) is formed higher than the upper surface of the interlayer insulating film (PIL) by retracting the upper surface of the interlayer insulating film (PIL). Consequently, reliability of connection between the plug (PL1) and wiring (W1), said connection being in the perpendicular direction, can be ensured. Furthermore, the wiring (W1) can be prevented from being embedded in the interlayer insulating film (PIL) or the quantity of the wiring formed by being embedded in the interlayer insulating film can be reduced. |