http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001085516-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38520f366e74704305b34fb93a81121e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 1999-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_79121d51f9d084cfa214abdd157acd0b |
| publicationDate | 2001-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2001085516-A |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | (57) [Summary] [PROBLEMS] To reduce wiring resistance without causing an accidental failure due to tolerance in a photolithography process. Provided is a manufacturing method for a semiconductor device. SOLUTION: An insulating film 15a for burying the conductive part 12 is formed so as to have a convex shape corresponding to the top of the convex conductive part 12. The insulating film 15a is covered with an etching stopper film 17 having an etching rate lower than the etching rate of the insulating film 15a. The protruding portion 17a of the etching stopper film 17 corresponding to the top of the protruding conductive portion 12 is partially removed, and the removed portion 17a of the etching stopper film 17 is selectively etched using an etching mask 19. Then, an etching hole 18 reaching the top of the convex conductive portion 12 is formed. A plug conductive portion 20 connected to the top of the convex conductive portion 12 is formed in the etching hole 18. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10049984-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11515257-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10418328-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9030014-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9337016-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011158319-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5684254-B2 |
| priorityDate | 1999-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.