| abstract |
A polishing solution for CMP includes a medium and silica particles as abrasive grains dispersed in the medium. The polishing solution for CMP satisfies the following conditions: (A1) the silica particles have a silanol group density of 5.0 groups/nm 2 or less; (B1) when arbitrary 20 particles are selected from an image obtained by observing the silica particles by a scanning electronic microscope, the particles have a two-axis average primary particle diameter of 25 to 55 nm; and (C1) the silica particles have an association degree of 1.1 or more. This provides a polishing solution for CMP having a high polishing speed to a barrier film, good dispersion stability of abrasive grains, and a high polishing speed to an interlayer insulating film and a polishing method in manufacturing, for example, a semiconductor substrate excellent in reduction in size, reduction in thickness, dimensional accuracy, and electric characteristics and having a high reliability and low cost. |