http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2015521380-A
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K3-1463 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02024 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-02 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate | 2013-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2015521380-A |
| titleOfInvention | Method for manufacturing a semiconductor device comprising chemical mechanical polishing (CMP) of a III-V material in the presence of a CMP (chemical mechanical polishing) composition comprising a compound containing an N-heterocycle |
| abstract | (A) Inorganic particles, organic particles, or a mixture or composite material thereof, (B) Chemical mechanical polishing composition (Q1) comprising a polymer comprising at least one N-heterocycle, and (M) an aqueous solvent, wherein Q1 has a pH of 1.5 to 4.5 A method of manufacturing a semiconductor device comprising chemical mechanical polishing of a substrate or layer comprising at least one III-V material in the presence of. [Selection figure] None |
| priorityDate | 2012-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 106.