| abstract |
Provided is a method for manufacturing a semiconductor element, wherein a multiquantum well structure having many pairs of quantum wells can be efficiently grown, while ensuring excellent crystal qualities. The semiconductor element manufactured by such method is also provided.nThe method is provided with a step of forming the multiquantum well structure (3) having 50 or more pairs or more of the quantum wells composed of a III-V compound semiconductor. In the step of forming the multiquantum well structure (3), the multiquantum well structure is formed by means of a total organometallic vapor phase deposition method (total organometallic vapor phase epitaxial method). |