http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004207588-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22
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filingDate 2002-12-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_143e5f5ae40695d7a58039264581b649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_434ca0c2def4c1cd0315ddbf3a301166
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publicationDate 2004-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber JP-2004207588-A
titleOfInvention Method for manufacturing multi-wavelength semiconductor laser
abstract A method of manufacturing a multi-wavelength semiconductor laser different from a conventional method of manufacturing a multi-wavelength semiconductor laser is provided. A first semiconductor laser device is formed on a semiconductor substrate, and then a second surface emitting semiconductor laser device having an oscillation wavelength band different from the oscillation wavelength band of the first semiconductor laser device is provided. Is formed and etched to form a second semiconductor laser element 24. A laminated structure 28 of a third surface emitting semiconductor laser device having an oscillation wavelength band different from that of the first and second semiconductor laser devices is formed and etched to form a third semiconductor laser device 30. I do. If necessary, fourth and fifth surface-emitting semiconductor laser elements are formed. As a result, it is possible to manufacture the multi-wavelength semiconductor laser 10 including a large number of semiconductor laser elements having different oscillation wavelength bands. [Selection] Fig. 2
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102203960-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013201465-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011016309-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104134713-A
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011054915-A
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Total number of triples: 32.