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filingDate 2009-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2010-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-2010073768-A1
titleOfInvention Light-receiving element, light-receiving element array, method for manufacturing light-receiving element and method for manufacturing light-receiving element array
abstract Disclosed is a light-receiving element having a light-receiving sensitivity in the infrared region, wherein good crystallinity can be easily obtained.  The light-receiving element can decrease the dark current, and an one-dimensional or two-dimensional array of the light-receiving elements can be easily formed with high precision.  A light-receiving element array, a method for manufacturing the light-receiving element and a method for manufacturing the light-receiving element array are also disclosed. The light-receiving element has a group III-V compound semiconductor multilayer structure which contains a p-n junction (15) in a light-receiving layer (3).  The light-receiving element is characterized in that the light-receiving layer has a multiple quantum well structure of a group III-V compound semiconductor, the p-n junction (15) is formed by selectively dispersing an impurity element within the light-receiving layer, and the impurity concentration in the light-receiving layer is not more than 5 × 1016 cm-3.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101316476-B1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2012174977-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2011016309-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017135229-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714640-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103403884-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2017135228-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2017130929-A1
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http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2013201465-A
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