| abstract |
Provided are a high-reliability semiconductor device with a narrow-pitch and multiple-pin semiconductor element embedded in a wiring substrate, which enables multilayering without deterioration in yield, and a method for manufacturing same. Multiple wiring layers and insulating layers are stacked, the semiconductor element is embedded in the insulating layer, and at least one of vias (16, 19, 22) provided in the respective insulating layers (15, 18, 21) or wires (17, 20, 23) provided in the respective wiring layers has a cross-sectional shape different from that of a via or wire provided in another insulating layer or wiring layer. |