| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8abf8d02f0fcf08fcfff823378aac118
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_001cbdf96827dcf778c1a7afa55dd19b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_3adc27dd2b5858910c81856640576583
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9418884ae1058f75949d0ce46cc1a9bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_077cc29177c0f3ab019f90b5194b94db |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-452 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-452 |
| filingDate |
2007-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6da9df3332bfb15d13f5dc36cb86478d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_65759d4ac0cddd6f14fafb9c58542f9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f4705ae9eddd04a3b1f0db17ea946ce
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d90522f213ade5018615a4a10c155e18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_26c3cfdc712df02bdb6aee278c6983b2 |
| publicationDate |
2007-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2007140421-A2 |
| titleOfInvention |
Process chamber for dielectric gapfill |
| abstract |
A system (100) to form a dielectric layer on a substrate from a plasma of dielectric precursors is described. The system (100) may include a deposition chamber (201 ), a substrate stage in the deposition chamber (201 ) to hold the substrate, and a remote plasma generating system coupled to the deposition chamber (201 ), where the plasma generating system is used to generate a dielectric precursor having one or more reactive radicals. The system (100) may also include a precursor distribution system (700) comprising dual-channel showerhead (700) positioned above the substrate stage. The showerhead (700) may have a faceplate (802) with a first set of openings (804) through which the reactive radical precursor enters the deposition chamber (201 ), and a second set of openings (806) through which a second dielectric precursor enters the deposition chamber (201 ). An in-situ plasma generating system may als be included to generate the plasma in the deposition chamber (201 ) from the dielectric precursors supplied to the deposition chambe (201). |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103031544-A |
| priorityDate |
2006-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |