| abstract |
A processing apparatus is provided for performing prescribed process to a subject to be processed in a processing chamber which can be vacuumized, especially for performing high-k dielectric films of HfO, HfSiO, ZrO, ZrSiO, PZT, BST and the like. A film adhesion preventing layer composed of an SAM (self assembled monolayer) is arranged on the surface of the constituting member of the processing chamber to be exposed to the processing atmosphere in the processing chamber, for instance, on the inner wall surface of the processing chamber. Thus, on the surface of the constituting member, an unnecessary film difficult to be removed by dry cleaning is prevented from being deposited, and cleaning frequency of the processing apparatus can be remarkably reduced. |