abstract |
[PROBLEMS] To provide an anti-reflective coating which is used in a lithography process for manufacturing a semiconductor device, exhibits excellent anti-reflective effect, does not cause the intermixing with a photoresist and exhibits an etching rate greater than that of a photoresist; and a composition for forming the anti-reflective coating. [MEANS FOR SOLVING PROBLEMS] A composition for use in forming an anti-reflective coating for lithography, which comprises a polymer having an ethylene-dicarbonyl structure and a solvent; an anti-reflective coating formed from the composition; and a method for forming a resist pattern which comprises using the composition. |