| abstract |
Disclosed is a novel composition for forming a resist underlayer film, which is capable of suppressing the generation of sublimation products during the formation (firing) of the film, while having a large dry etching rate selectivity that is a requirement for resist underlayer film. Also disclosed is a method for forming a resist pattern, which uses the composition for forming a resist underlayer film.nSpecifically disclosed is a composition for forming a resist underlayer film for lithography, which contains a polymer that has an aromatic carbonyl structure such as an aromatic aldehyde structure in the main chain, a sulfonic acid compound and a solvent, with the aromatic carbonyl structure being introduced into the main chain of the polymer through an ether bond, an ester bond, or an ester bond and an ether bond. Also specifically disclosed is a method for forming a pattern, which uses the composition. |