http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009104685-A1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G63-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G63-668 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-1455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0273 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G63-6854 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G63-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate | 2009-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2011-06-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-WO2009104685-A1 |
| titleOfInvention | Resist underlayer film forming composition and resist pattern forming method using the same |
| abstract | An object of the present invention is to obtain a composition for forming a resist underlayer film having a high dry etching rate selection ratio and a desired k-value and n-value at a short wavelength, such as an ArF excimer laser. To do. SOLUTION: At least a tetracarboxylic dianhydride having an alicyclic structure or an aliphatic structure and a diepoxy compound having two epoxy groups are used and reacted with an organic solvent containing an alcohol compound having an OH group. A composition for forming a resist underlayer film comprising a polymer and a solvent. [Selection figure] None |
| priorityDate | 2008-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 115.