| abstract |
PROBLEM TO BE SOLVED: To form a photoresist pattern that has a high anti-reflecting effect, does not cause intermixing with a photoresist, and does not have a large skirt shape underneath, and is irradiated with ArF excimer laser, F2 excimer laser, etc. To provide an antireflection film that can be used in a lithography process using light, and an antireflection film-forming composition for forming the antireflection film. An antireflection film-forming composition comprising a reaction product obtained by reacting an isocyanuric acid compound having two or three 2,3-epoxypropyl groups with a benzoic acid compound. [Selection figure] None |