| abstract |
A polishing composition and a rinsing composition which effectively prevent a wafer from being contaminated by metal impurities are disclosed. The polishing composition contains a chelating agent, an alkali compound, a silicon dioxide and water. The rinsing composition contains a chelating agent, an alkali compound and water. The chelating agent contained in the polishing composition and the rinsing composition is an acid represented by the following chemical formula (1) or its salt. In the chemical formula (1), Y2 and Y3 respectively represent an alkylene group, n is an integer of 0 to 4, and 4+n substituents expressed by R8-R12 respectively represent an alkyl group. At least four alkyl groups have a phosphonic acid group. |