| abstract |
The purpose of the present invention is to provide a means with which impurities remaining on the surface of an object to be polished that has been subjected to chemical mechanical polishing (CMP) can be sufficiently removed. This polishing composition is used after polishing has been performed using a polishing composition (A) including abrasive grains or an organic compound (A), and is characterized by including: an organic compound (B) which has a molecular weight of at least 100, and which includes at least one atom selected from the group consisting of a fluorine atom, an oxygen atom, a nitrogen atom, and a chlorine atom; a pH adjustment agent; and 0-1 mass% of abrasive grains. |