http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-03054247-A2

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filingDate 2002-12-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5321f427fdcc331d3bde201f5ee9fa92
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publicationDate 2003-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber WO-03054247-A2
titleOfInvention Cleaning gas composition for semiconductor production equipment and cleaning method using the gas
abstract The present invention provides a cleaning gas for semiconductor or equipment for producing semiconductor or liquid crystal, comprising a fluorine gas containing 1 vol % or less of oxygen and/or oxygen-containing compound. The cleaning gas of the present invention enables an efficient production process of semiconductor device with a high etching rate to improve the cleaning efficiency which ensures excellent cost performance.
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priorityDate 2001-12-13-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 38.