| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_587a9a7da5b1aed70a9258d83f009d74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fe42d3eaef81d27b6a2a8be5ec07084d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4ca91afce110b15798fe3226a28e3365
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_664f5b543543aac4cf0153a4ef4e0f85 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-022 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3171
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-564
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-48 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-56
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B9-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-317
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-48 |
| filingDate |
2009-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0ebb8c25037030ba2146e0efcc235aaa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_85dc997ed2656f9aa83d2aee59c778d3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f06b1640258e091c5a1e48ffe8e3da91 |
| publicationDate |
2017-04-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9627180-B2 |
| titleOfInvention |
Method for ion source component cleaning |
| abstract |
This invention relates in part to a method for cleaning an ion source component of an ion implanter used in semiconductor and microelectronic manufacturing. The ion source component includes an ionization chamber and one or more components contained within the ionization chamber. The interior of the ionization chamber and/or the one or more components contained within the ionization chamber have at least some deposits thereon of elements contained within a dopant gas, e.g., carborane (C 2 B 10 H 12 ). The method involves introducing a cleaning gas into the ionization chamber, and reacting the cleaning gas with the deposits under conditions sufficient to remove at least a portion of the deposits from the interior of the ionization chamber and/or from the one or more components contained within the ionization chamber. The cleaning gas is a mixture of F 2 , one or more inert gases selected from noble gases and/or nitrogen, and optionally O 2 , or a mixture of an oxygen/fluorine-containing gas and one or more inert gases selected from noble gases and/or nitrogen. The deposits adversely impact the normal operation of the ion implanter causing frequent down time and reducing tool utilization. |
| priorityDate |
2009-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |