| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e4c33b3783c3e8ecf869dd7c9c97260d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_acede8d466af06e3a8482db7c9726b18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5128cfc84a0fb189fceb3cd240c44493
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_09649d6478b02c6967f2eafd2385fc64
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_14671f266b6732ecdc714f4574fb3d95 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-305 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-30 |
| filingDate |
2001-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8fb43c07e77b8f406776131709f7c0b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd0d08835302d3484d1fbf8810a7a5e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c06359dc4539de49f14c08ceebd6281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d8d7220f3beb87b905927bee381c6050 |
| publicationDate |
2002-01-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-0204935-A1 |
| titleOfInvention |
Molecule detecting sensor |
| abstract |
A molecule detecting sensor enhanced in photoelectric current characteristics by using the following steps : A first silicon layer (12) is deposited on an R-plane sapphire substrate (11), silicon ions are implanted into the first silicon layer (12) to turn a part of the interface on the sapphire substrate (11) side to amorphous, and then the part is recrystallized by heat treating. The resultant product is charged into an oxidizing furnace to oxidize part of the first silicon layer (12) and then remove the oxidized silicon oxide film (13). A second silicon layer (15) is deposited on the remaining portion of the first silicon layer as a seed silicon layer (14). An insulation layer (3) is formed on a laminated structure consisting of this seed silicon layer (14) and the second silicon layer (15) and being defined as a single-crystal silicon layer (2), and an electrolyte (4) is placed on the insulation layer to thereby form a molecule detecting sensor. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023281674-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2005093418-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2011232569-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006506644-A |
| priorityDate |
2000-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |