| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e757fd4fedc4fe825bb81b1b466a0947 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0649
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6681
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78642
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823487
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823828
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823885
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 |
| filingDate |
2017-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9109b68b55594387713c374f294c46cb |
| publicationDate |
2017-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9837410-B1 |
| titleOfInvention |
Fabrication of vertical field effect transistors with uniform structural profiles |
| abstract |
Semiconductor devices are fabricated with vertical field effect transistor (FET) devices having uniform structural profiles. Semiconductor fabrication methods for vertical FET devices implement a process flow to fabricate dummy fins within isolation regions to enable the formation of vertical FET devices with uniform structural profiles within device regions. Sacrificial semiconductor fins are formed in the isolation regions concurrently with semiconductor fins in the device regions, to minimize/eliminate micro-loading effects from an etch process used for fin patterning and, thereby, form uniform profile semiconductor fins. The sacrificial semiconductor fins within the isolation regions also serve to minimize/eliminate non-uniform topography and micro-loading effects when planarizing and recessing conductive gate layers and, thereby form conductive gate structures for vertical FET devices with uniform gate lengths in the device regions. The sacrificial semiconductor fins are subsequently removed and replaced with insulating material to form the dummy fins. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11171002-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019035912-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10580652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11563106-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11784186-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10658490-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10535754-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10692776-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10312103-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11189614-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20200015160-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11004751-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11302799-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10714599-B2 |
| priorityDate |
2017-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |