Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823431 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7851 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66553 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-51 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-308 |
filingDate |
2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_96d4d3cbcecabb7865ed047794171926 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61cd158d8bc62452a491ac2148e1fe94 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_286e44f2f3027351d17b7c9cd2cffe64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0663f2fa2efb0354f48dac8d33f4d95d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f3e74ddeb36c1a037887b191479f2eed |
publicationDate |
2020-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-10658490-B2 |
titleOfInvention |
Structure and formation method of isolation feature of semiconductor device structure |
abstract |
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a fin structure over a semiconductor substrate. The semiconductor device structure also includes active gate stacks over the fin structure. The semiconductor device structure further includes a dummy gate stack over the fin structure. The dummy gate stack is between the active gate stacks. In addition, the semiconductor device structure includes spacer elements over sidewalls of the dummy gate stack and the active gate stacks. The semiconductor device structure also includes an isolation feature below the dummy gate stack, the active gate stacks and the spacer elements. The isolation feature extends into the fin structure from the bottom of the dummy gate stack such that the isolation feature is surrounded by the fin structure. |
priorityDate |
2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |