| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2013-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_582ed222210aa4b660c2b59567954280
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_833c957b24b19919906248883cc656e5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0c88be7afc51cb29256481d91a2beefc |
| publicationDate |
2017-07-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9711682-B2 |
| titleOfInvention |
Multiple quantum well light emitting device with multi-layer barrier structure |
| abstract |
The light emitting device includes a first conductive semiconductor layer; a second conductive semiconductor layer on the first conductive semiconductor layer; and an active layer between the first and second conductive semiconductor layers. The active layer includes a plurality of well layers and a plurality of barrier layers, wherein the well layers include a first well layer and a second well layer adjacent to the first well layer. The barrier layers include a first barrier layer disposed between the first and second well layers, and the first barrier layer includes a plurality of semiconductor layers having an energy bandgap wider than an energy bandgap of the first well layer. At least two layers of the plurality of semiconductor layers are adjacent to the first and second well layers, and have aluminum contents greater than that of the other layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11569416-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937923-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10593838-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10910519-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10903395-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10340415-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10720549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2018069150-A1 |
| priorityDate |
2012-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |