| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fa80eed27901ac84139c7a7109c21e17 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-36
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-145
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0025
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 |
| filingDate |
2017-11-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd1b0bed1e5b2474c91f3c8109b2c2bc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2a172121518f3576a7bada23f535a073
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_582ed222210aa4b660c2b59567954280 |
| publicationDate |
2021-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-10903395-B2 |
| titleOfInvention |
Semiconductor device having varying concentrations of aluminum |
| abstract |
A light emitting structure that includes: first and second semiconductor layers having aluminum; and an active layer having aluminum between the first and the second semiconductor layers, the intensity exhibited in the second semiconductor layer range between a first minimum intensity of the secondary ions and a first maximum intensity of the secondary ions, and the intensity exhibited in the first semiconductor layer include a second minimum intensity of the secondary ions, the second minimum intensity being different from the first minimum intensity, and at a first prescribed distance from a surface of the second semiconductor layer, the second semiconductor layer exhibits a first intermediate intensity of the secondary ions corresponding to the second minimum intensity, which is between the first minimum intensity and the first maximum intensity, wherein the first maximum intensity occurs at a second prescribed distance from the first prescribed distance, wherein a ratio of the second prescribed distance (W1) to the first prescribed distance (W2) is within a range of 1:0.2 to 1:1. |
| priorityDate |
2016-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |