| abstract |
Growing a first nitride semiconductor layer on an Al x Ga y In I-x-y N (0<x<1, 0<y<1, 0<x+y<1) layer, a second step for reducing the thickness of the first nitride semiconductor layer by growth interruption and, growing a second nitride semiconductor layer having a band gap energy higher than that of the first nitride semiconductor layer on the first nitride semiconductor layer with the reduced thickness and a light emitting device using the growth method. |