| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9f6245ebaf34ea6af7cac0edd14bee14 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06875 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-078 |
| filingDate |
2015-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_036c90ee036a8cfd4622f455a154a266
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d123a9dc5ede9f752a159e9239ae755 |
| publicationDate |
2017-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9601652-B2 |
| titleOfInvention |
Ohmic N-contact formed at low temperature in inverted metamorphic multijunction solar cells |
| abstract |
A method of forming a multijunction solar cell including an upper subcell, a middle subcell, and a lower subcell by providing a substrate for the epitaxial growth of semiconductor material; forming a first solar subcell on the substrate having a first band gap; forming a second solar subcell over the first solar subcell having a second band gap smaller than the first band gap; forming a graded interlayer over the second subcell, the graded interlayer having a third band gap greater than the second band gap; forming a third solar subcell over the graded interlayer having a fourth band gap smaller than the second band gap such that the third subcell is lattice mismatched with respect to the second subcell; and forming a contact composed of a sequence of layers over the first subcell at a temperature of 280° C. or less and having a contact resistance of less than 5×10 −4 ohms-cm 2 . |
| priorityDate |
2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |