| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_28b630cf4f250e737214e7d2941c5ec5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d1fb6518323760fc4c7c436aafa8740f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_43298d53bd17c7e47c2e5165ed5b62d1 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-06875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0725
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02008
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0725 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate |
2012-09-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5bcebfeea46d9f6da3a5b021d1ece3d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a818a96c9ae6b27e62edab911931c71 |
| publicationDate |
2014-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8753918-B2 |
| titleOfInvention |
Gallium arsenide solar cell with germanium/palladium contact |
| abstract |
A method of forming a solar cell including: providing a semiconductor body including at least one photoactive junction; forming a semiconductor contact layer composed of GaAs deposited over the semiconductor body; and depositing a metal contact layer including a germanium layer and a palladium layer over the semiconductor contact layer so that the specific contact resistance is less than 5×10 −4 ohms-cm 2 . |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10263131-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10457148-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10283662-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8987042-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9748432-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10790406-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9608156-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9287438-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9846277-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10587221-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9601652-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11489082-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10333020-B2 |
| priorityDate |
2008-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |