| abstract |
A low-bandgap, double-heterostructure PV device is provided, including in optical alignment a first InP 1−y As y n-layer formed with an n-type dopant, an Ga x In 1−x As absorber layer, the absorber layer having an n-region formed with an n-type dopant and an p-region formed with a p-type dopant to form a single pn-junction, and a second InP 1−y As y p-layer formed with a p-type dopant, wherein the first and second layers are used for passivation and minority carrier confinement of the absorber layers. |