| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00415c6954d50881130756342023f349
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aaffc067902782a0853d687a002b8fb8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7bfd706326ccfc1a7727e0d815a1780f |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67092 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30655
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02076
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67028
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31127
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32131
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate |
2015-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c02dc6144ce3d356ce4cbb4d89fd4ce3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e953b16929c2fcd9816bac029c3787b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_11d5a0ba970ae491a14b4b868e8a9882 |
| publicationDate |
2016-05-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-9330977-B1 |
| titleOfInvention |
Hybrid wafer dicing approach using a galvo scanner and linear stage hybrid motion laser scribing process and plasma etch process |
| abstract |
Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the plurality of integrated circuits. The mask is then patterned with a galvo scanner and linear stage hybrid motion laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the plurality of integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the plurality of integrated circuits. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10163709-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10510604-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11688639-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016240439-A1 |
| priorityDate |
2015-01-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |