Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e9d1eacb9db074040989181d36346d76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d5d04736b0b882a4f5a1e0e0e4cd8cbb |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-45144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-00014 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-325 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-38 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
filingDate |
2011-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2016-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_274e51871a4c77694c88e4f05aa47895 |
publicationDate |
2016-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9299885-B2 |
titleOfInvention |
Light-emitting diode, light-emitting diode lamp, and illumination device |
abstract |
The invention provides a light-emitting diode, a light-emitting diode lamp, and an illumination device which emit infrared light with both high-speed response and high output performance. The invention relates to a light-emitting diode including a light-emitting portion which has an active layer of a quantum well structure, in which a well layer made of a compound semiconductor having a composition formula (In X1 Ga 1-X1 )As (0≦X1≦1) and a barrier layer made of a compound semiconductor having a composition formula (Al X2 Ga 1-X2 )As (0≦X2≦1) are alternately laminated, and a first clad layer and a second clad layer sandwiching the active layer, an electric current diffusion layer which is formed on the light-emitting portion, and a functional substrate which is bonded to the electric current diffusion layer, a light-emitting diode lamp, and an illumination device. The first and second clad layers are made of a compound semiconductor having a composition formula (Al X3 Ga 1-X3 ) Y1 In 1-Y1 P (0≦X3≦1, 0<Y1≦1), and when a single well layer and a single barrier layer form a single paired layer, the number of paired layers is equal to or smaller than 5. |
priorityDate |
2010-12-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |