| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_15367276eafe24bbc86d8a9f48168294
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f33bc69cdcfc04ef13de35fa512a3a1b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_82720f0fe09c6d788db8fde9be2350dc
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36543c09d6681c209024a1ef6683910a |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-06216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0014
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S2301-173
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-2036
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02381
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02546
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02499
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-0218
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3013
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02433
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02463
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3412
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-267 |
| filingDate |
2012-02-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f68caf3d0aff20d7e611cafc9cfc87a7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7bcec4aac8011e5e746c5f7b24094ffa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_78e114404347d0a24b026f7865ea35fa |
| publicationDate |
2014-01-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014016659-A1 |
| titleOfInvention |
Semiconductor Device and Fabrication Method |
| abstract |
A semiconductor device is disclosed comprising: a substrate having a surface comprising germanium; a layer of gallium on said surface; and a layer of gallium arsenide on the gallium covered surface. The semiconductor heterostructure of gallium arsenide on germanium is fabricated by the steps of: protecting by a shutter a surface comprising germanium in an environment having a partial pressure of arsenic less than 10 −8 torr; epitaxially growing a layer of gallium on the said surface immediately after exposure of said surface; and epitaxially growing a layer of gallium arsenide on the gallium covered surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016221839-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2013248819-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016233647-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9299885-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114907848-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9343874-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9793686-B2 |
| priorityDate |
2011-02-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |