| abstract |
(57) [Abstract] [Purpose] By covering the surface of the light emitting diode with a dielectric thin film having a refractive index suitable for the encapsulation resin, the optical characteristics after resin molding are improved, the humidity resistance is excellent, and high brightness and high brightness are achieved. Get credibility. [Structure] A refractive index of 2.2 to 2.2 is formed on the surface of the window layer 4 of the AlGaAs / GaAs red or infrared light emitting diode. It is covered with the antireflection film 5 of 2.7. The antireflection film is composed of a dielectric thin film, and its material is zinc sulfide, titanium oxide, or arsenic sulfide. The antireflection film 5 may be covered with a protective film made of silicon oxide or silicon nitride. |