Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c19a91365ed494d9fe27d24190d4459f |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-10155 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
filingDate |
2014-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d6a57049ed499af158e6fcc7f1d1109d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4da08de5a7826d91d9616f24b213972 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40666f69c5f00e3332ebac185fd4d3fe |
publicationDate |
2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-9196794-B2 |
titleOfInvention |
Semiconductor light-emitting device, method for forming recesses of the same, and light source apparatus using the same |
abstract |
A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting an exit path of the polarized light and includes a plurality of recesses. An angle formed between the extension direction of the recesses and the polarization direction of the polarized light is from 0° to 45°. The recesses have a minute uneven structure (texture) at at least part of a surface of each recess, the minute uneven structure being shallower than the depth of each recess. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20180084639-A |
priorityDate |
2012-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |