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publicationDate 2015-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9196794-B2
titleOfInvention Semiconductor light-emitting device, method for forming recesses of the same, and light source apparatus using the same
abstract A semiconductor light-emitting device made of a nitride-based semiconductor includes a semiconductor stacked structure having a nonpolar plane or a semipolar plane as a principal plane, and including an active layer for emitting polarized light. The semiconductor light-emitting device includes a striped structure which is provided in a position intersecting an exit path of the polarized light and includes a plurality of recesses. An angle formed between the extension direction of the recesses and the polarization direction of the polarized light is from 0° to 45°. The recesses have a minute uneven structure (texture) at at least part of a surface of each recess, the minute uneven structure being shallower than the depth of each recess.
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