| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-05552
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-73265
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-04042 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-05 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2013-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_05fd807e2afbec5b76e4e514ff2c8061
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee9eee685c7ee3a7cefcdc4a8726c207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b89d01e368a697ed5572ea8498aefcdf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ce745daa908bb44991aebe62a77da3b |
| publicationDate |
2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2014042456-A1 |
| titleOfInvention |
Nitride semiconductor light emitting chip, and nitride semiconductor light emitting device |
| abstract |
A nitride semiconductor light emitting chip includes: a conductive substrate including a nitride semiconductor layer; an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer sequentially formed on a principal surface of the nitride semiconductor layer; and an n-side electrode formed in contact with the conductive substrate. A recess is formed in a back surface of the conductive substrate opposite to the principal surface. The n-side electrode is in contact with at least part of a surface of the recess. A depth D1 is not less than 25% of a thickness T, where T represents a thickness of the conductive substrate, and D1 represents a depth of the recess. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014217423-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9196794-B2 |
| priorityDate |
2012-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |