| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9fd657d3d48e80a640b83159b035ea09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0d2e9494921b487b5fd82030e7422f23
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_08f001ce25ca0c0a9286a5a7ffe64e17
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_063a1b324005ddc15e16e7529c6258c4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4adc1bf22816a1b9f06092265327289d |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 |
| filingDate |
2011-08-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e634c7e42cb71bb69f7f4b6c416b572c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27c9a6982d6661a106239d7d483df723
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca0d14e6720391d2a3dac30f2648641a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5c831108ee6aa95b19267681a64f3f4 |
| publicationDate |
2013-05-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-2013126901-A1 |
| titleOfInvention |
Semiconductor light-emitting element |
| abstract |
A semiconductor light-emitting element according to the present invention includes: an n-type nitride semiconductor layer 21 ; a p-type nitride semiconductor layer 23 ; an active layer region 22 which includes an m-plane nitride semiconductor layer and which is interposed between the n- and p-type nitride semiconductor layers; an n-type electrode 30 which is electrically connected to the n-type nitride semiconductor layer; a p-type electrode 40 which is electrically connected to the p-type nitride semiconductor layer; a light-emitting face, through which polarized light that has been produced in the active layer region is extracted out of this element; and a striped structure 50 which is provided for the light-emitting face and which has a plurality of projections that run in a direction that defines either an angle of 5 degrees to 80 degrees or an angle of −80 degrees to −5 degrees with respect to the a-axis direction of the m-plane nitride semiconductor layer. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9196794-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9059077-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014231830-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-2752894-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8928004-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2014217423-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11222995-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9379284-B2 |
| priorityDate |
2010-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |