http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9046768-B2
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2baf849d216e689ecc40ccc931a7a7bc |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
| filingDate | 2012-09-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0207ac1bc5b6dff996919c7180c91bf6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d338fa9da212910df6f0916095817b8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08af8e1a8afe96faf8248c1803248121 |
| publicationDate | 2015-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | US-9046768-B2 |
| titleOfInvention | Resist overlayer film forming composition for lithography |
| abstract | A resist overlayer film composition for lithography from which a resist overlayer film is formed. A resist overlayer film forming composition including a benzene compound having at least one amino group. A resist may be an EUV resist or an electron beam resist. The benzene compound may have at least one amino group and at least one alkyl group, one or two amino groups and one to four alkyl groups, or may be a compound of Formula (1): n nwhere R 1 to R 5 are independently a hydrogen atom, a C 1-10 alkyl group such as methyl, ethyl or isopropyl, or an amino group. |
| priorityDate | 2011-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 643.