| abstract |
Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a plasma etch chamber includes a plasma source disposed in an upper region of the plasma etch chamber. The plasma etch chamber also includes a cathode assembly disposed below the plasma source. The cathode assembly includes a cooling RF-powered chuck for supporting an inner portion of a backside of a substrate carrier. The cathode assembly also includes a cooling RF-isolated support surrounding but isolated from the RF-powered chuck. The RF-isolated support is for supporting an outer portion of the backside of the substrate carrier. |