Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2221-1047 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7682 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6719 |
classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 |
filingDate |
2013-06-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce9859ae1c6cc8574a2f4b767f14b8f8 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_69ff4355441743ba0ea68147764f271c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa14c178e867c023cba566a629133970 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dcd79d955774624a15dd5459e5de68aa |
publicationDate |
2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8993444-B2 |
titleOfInvention |
Method to reduce dielectric constant of a porous low-k film |
abstract |
Embodiments of the present invention generally relate to methods for lowering the dielectric constant of low-k dielectric films used in semiconductor fabrication. In one embodiment, a method for lowering the dielectric constant (k) of a low-k silicon-containing dielectric film, comprising exposing a porous low-k silicon-containing dielectric film to a hydrofluoric acid solution and subsequently exposing the low-k silicon-containing dielectric film to a silylation agent. The silylation agent reacts with Si—OH functional groups in the porous low-k dielectric film to increase the concentration of carbon in the low-k dielectric film. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9548241-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015197849-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9318364-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10121698-B2 |
priorityDate |
2012-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |