http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8216861-B1

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7bb1ac0effc475b4465efef5039e8c3f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_679fc7858d46067382eebecbd83c1596
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5bf2742497f861cedc8a5d7a08b49650
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_334aee04cc8310d243d3fc88a540ab6a
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00
filingDate 2011-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51f644d2b5d716081db41f8057a6264f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e2e75b529a7b36fadc8b01f12c37625
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_046fa05d4c70e1e3c0ac73f7ef3c941c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02cd8a7097e2b4ec9284ba7c55c902fd
publicationDate 2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8216861-B1
titleOfInvention Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition
abstract Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10113234-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096549-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8993444-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104143524-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9123532-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8877659-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016017492-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348784-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10460936-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015100292-A1
priorityDate 2011-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7470454-B2
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID297
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7845
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID414859283
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID962
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419547008
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559581
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6547
http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID6557
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID407043279
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419512635

Total number of triples: 48.