Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_7bb1ac0effc475b4465efef5039e8c3f http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_679fc7858d46067382eebecbd83c1596 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5bf2742497f861cedc8a5d7a08b49650 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_334aee04cc8310d243d3fc88a540ab6a |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
filingDate |
2011-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_51f644d2b5d716081db41f8057a6264f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9e2e75b529a7b36fadc8b01f12c37625 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_046fa05d4c70e1e3c0ac73f7ef3c941c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_02cd8a7097e2b4ec9284ba7c55c902fd |
publicationDate |
2012-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8216861-B1 |
titleOfInvention |
Dielectric recovery of plasma damaged low-k films by UV-assisted photochemical deposition |
abstract |
Methods for the repair of damaged low k films are provided. Damage to the low k films occurs during processing of the film such as during etching, ashing, and planarization. The processing of the low k film causes water to store in the pores of the film and further causes hydrophilic compounds to form in the low k film structure. Repair processes incorporating ultraviolet (UV) radiation and carbon-containing compounds remove the water from the pores and further remove the hydrophilic compounds from the low k film structure. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10113234-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10096549-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8993444-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-104143524-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9123532-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8877659-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2016017492-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11348784-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10460936-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2015100292-A1 |
priorityDate |
2011-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |