Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_53a0c1ad5b9388f76b600a258fb19799 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1c5a897638cfc91e2de6e8b5c9080d32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_dd5635a366bf6fcd9a5d53e816c174da http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1d80407559e5248fb71692ee0bd76dce http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4f667450390dbe22f6488530c3850e67 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02052 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-469 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-461 |
filingDate |
2010-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1ae7aa69db00d2d3ea8b6ff9fc0b4e68 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a858741b94502ef63ded889feee33833 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4207104188b77aa256dd96c72b57b822 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93de71fab2cbd8674b4975b060747bcd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61f0571308e71f1bcffabfaf526a92d4 |
publicationDate |
2013-12-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
US-8617993-B2 |
titleOfInvention |
Method of reducing pattern collapse in high aspect ratio nanostructures |
abstract |
A method is provided for treating the surface of high aspect ratio nanostructures to help protect the delicate nanostructures during some of the rigorous processing involved in fabrication of semiconductor devices. A wafer containing high aspect ratio nanostructures is treated to make the surfaces of the nanostructures more hydrophobic. The treatment may include the application of a primer that chemically alters the surfaces of the nanostructures preventing them from getting damaged during subsequent wet clean processes. The wafer may then be further processed, for example a wet cleaning process followed by a drying process. The increased hydrophobicity of the nanostructures helps to reduce or prevent collapse of the nanostructures. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10784101-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11094527-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10886166-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2019067833-A3 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10957530-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10964525-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10727044-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10937644-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10497558-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015084187-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11482409-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10475656-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11651952-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10916418-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10954480-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9653307-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11791152-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11037779-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10748757-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10825686-B2 |
priorityDate |
2010-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |