| abstract |
A wet clean method for semiconductor device fabrication begins by providing a semiconductor device structure having a substrate and features protruding from the substrate. The features are formed from a dielectric material, such as an ultra-low-k material. The method continues by cleaning the semiconductor device structure with an aqueous solution and, following the cleaning step, displacing the aqueous solution with a first solvent. Thereafter, the features are exposed to a second solvent that contains a hydrophobic treatment agent that reacts with sidewalls of the features to form a hydrophobic layer on the sidewalls. |