http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8500912-B2

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c430a0057e1ea5f34371214016160915
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_421cadb30fc0074fe61126eb980d19d6
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-205
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32192
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00
filingDate 2011-01-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bd9d44ba1caf04a1cfeaaf8d2e0c825c
publicationDate 2013-08-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-8500912-B2
titleOfInvention Plasma processing method and plasma processing apparatus
abstract Provided is a plasma processing method capable of removing a Ti-series deposit from the surface of a processing chamber of a plasma processing apparatus without production of a foreign matter such as a boron oxide. The plasma processing method includes carbon-series deposition discharge which succeeds product etching during which a sample containing a Ti material is processed, and during which a carbon-series film is deposited on a Ti reaction by-product deposited on the surface of the processing chamber, and chlorine-series discharge which succeeds the carbon-series deposition discharge and during which the carbon-series film and Ti that are deposited on the surface of the processing chamber are removed.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10375901-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10674681-B2
priorityDate 2010-10-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 46.