Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F4-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B7-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate |
1997-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f432f9c4e040028192f6ec14f81d00c9 |
publicationDate |
1999-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-H11140675-A |
titleOfInvention |
How to clean the vacuum chamber |
abstract |
(57) [PROBLEMS] To provide a cleaning method capable of removing chlorine-based products adhering in a vacuum chamber of a plasma etching apparatus when a metal film is plasma-etched by a mixed gas containing chlorine gas. SOLUTION: By performing plasma cleaning using a mixed gas of oxygen and methanol as a cleaning gas, a chlorine-based product which is an adhering substance to a vacuum chamber of a plasma etching apparatus is decomposed and removed, and the chlorinated product is removed. Wafer contamination can be reduced and the wet cleaning interval can be lengthened. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006165246-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7344909-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8500912-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7504279-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2001308068-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-105436180-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2004107425-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20040039609-A |
priorityDate |
1997-11-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |