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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B08B3-12
filingDate 2005-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2010-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c634ad3eccfdb29049bd21c6678d59a
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publicationDate 2010-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-7662235-B2
titleOfInvention Method of cleaning etching apparatus
abstract To provide a cleaning method for an etching apparatus for a metal film that efficiently removes an etching residue deposited in an etching process chamber, assures the reproducibility of the etching performance, and keeps the etching process chamber in a low-dust-emission condition. n Each time one workpiece with a metal film is etched (S 1 ), the interior of the vacuum chamber is cleaned by replacing the workpiece with a dummy substrate (S 2 ), performing a first step of plasma processing using oxygen (O 2 ) and carbon tetrafluoride (CF 4 ) to remove a carbon-based deposit pile (S 3 ), and performing a second step of plasma processing using boron trichloride (BCl 3 ) and chlorine (Cl 2 ) to remove a residue that could not be removed by the first step and an etching residue of the metal film (S 4 ).
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