| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8fc2faeddee6fcf297dc7e56dcdff13d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_9a2851e9810f2e7af4b4394907223749
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_54eefc26c2916e76efb64cb4eb42431c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-14181
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-13025 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76898
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-42 |
| filingDate |
2012-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_29a762a45fe3b1f84d4d108fafec6986
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c45578075239fad7b5a20f9ed0377ca
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1af8fdb2374ebc4c83b952e3b54fcc88 |
| publicationDate |
2013-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8456019-B2 |
| titleOfInvention |
Semiconductor device |
| abstract |
A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101 ; a through electrode 129 extending through the silicon substrate 101 ; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101 . In addition, the semiconductor device 100 also includes a protruding portion 146 , being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129 , and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129. |
| priorityDate |
2005-09-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |