| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1eb9cd2af2f87dcf20b0fbbdfe79996e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aa968be7c2e229ac8efbe5e81cfcfa6c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bf02112c87be23c922b51ffa25f0f4d9 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76886
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76867
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76849
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76862
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76856
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-00 |
| filingDate |
2010-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce853d92fef794023a39eda11c4e534c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6c800b919249c73aa287e756ce3106a |
| publicationDate |
2013-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8430992-B1 |
| titleOfInvention |
Protective self-aligned buffer layers for damascene interconnects |
| abstract |
Protective self aligned buffer (PSAB) layers are layers of material that are selectively formed at the surface of metal layers in a partially fabricated semiconductor device. In a Damascene interconnect, PSAB layer typically resides at an interface between the metal layer and a dielectric diffusion barrier layer. PSAB layers promote improved adhesion between a metal layer and an adjacent dielectric diffusion barrier layer. Further, PSAB layers can protect metal surfaces from inadvertent oxidation during fabrication process. A PSAB layer may be formed entirely within the top portion of a metal layer, by, for example, chemically converting metal surface to a thin layer of metal silicide. Thickness of PSAB layers, and, consequently resistance of interconnects can be controlled by partially passivating metal surface prior to formation of PSAB layer. Such passivation can be accomplished by controllably treating metal surface with a nitrogen-containing compound to convert metal to metal nitride. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I589203-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015206798-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10813231-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2019124778-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10433426-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10477701-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9633896-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10729014-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8753978-B2 |
| priorityDate |
2004-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |